本文采用ZnO忆阻器模拟了生物神经突触的记忆和学习功能.ZnO突触器件表现出典型的随时间指数衰减的突触后兴奋电流(EPSC),以及EPSC的双脉冲增强行为.在此基础上,实现了学习-遗忘-再学习的经验式学习行为,以及四种不同种类的电脉冲时刻依赖可塑性学习规则.ZnO突触器件实现了超低能耗操作,单次突触行为能耗最低为1.6pJ,表明其可以用来构筑未来的人工神经网络硬件系统,最终开发出与人脑结构类似的认知型计算机以及类人机器人.
ZnO memristive devices have been employed to emulate synaptic memory and learning functions.ZnO synaptic devices show a typical excitatory post-synaptic current (EPSC),i.e.exponentially decreasing with time,and pair-pulse facilitation behavior of EPSC.Furthermore,the learning-forgettingrelearning empirical behavior and four types of spike-timing-dependent-plasticity learning rules have been implemented.Ultra-low energy consumption operation has been realized in ZnO synaptic devices showing a minimum energy consumption of 1.6pJ for a single synaptic behavior.The results indicate that ZnO synaptic devices can be potentially used to construct the future artificial neural networks in hardware and ultimately develop cognitive computers operating like human brains and humanoid robots.
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